Effect of Copper Concentration on Optical Band Gap of Spin Coated Cu2ZnSnS4 Thin Films for Photovoltaic Application

Rasaq Ayinla Babatunde; R. Kola Odunaike

doi:10.62292/njp.v35i2.2026.581

Authors

Rasaq Ayinla Babatunde
rasaq.babatunde@federalpolyilaro.edu.ng

Federal Polytechnic Ilaro

Olabisi Onabanjo University
R. Kola Odunaike
Olabisi Onabanjo University

Keywords:

Band gap, Copper, CZTS, Spin coating

Abstract

Spin coating method was used to grow copper zinc tin sulphide (CZTS) thin films on fluorine doped tin oxide (FTO) substrates. Copper nitrate, zinc nitrate, tin chloride, and thiourea were the sources of Cu, Zn, Sn, and S, respectively. Ammonia was used as pH adjuster and triethanolamine (TEA) served as a complex agent. The precursor solution was formed by varying the concentration of copper from 0.05 M to 0.5 M while keeping the concentrations of other constituents constant. The effect of copper concentration was studied on transmittance, absorbance, reflectance and band gap of the films. The result shows that the film deposited at 0.05 M of copper exhibits highest transmittance and lowest reflectance in the visible region of electromagnetic spectrum and the band gap of the film at 0.2 M of copper was 3.22 eV while the band gap of the film at 0.05 M was 3.80 eV. The film can be used as a buffer layer in heterojunction thin film solar cells.

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REFERENCES

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Effect of Copper Concentration on Optical Band Gap of Spin Coated Cu2ZnSnS4 Thin Films for Photovoltaic Application

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