Electrical and Solid State Properties of Aluminum Doped Nickel Sulphide Thin Film by Chemical Bath Method

Emmanuel Ifeanyi Ugwu; Barnaba Abel Adeiza; Hilary Uche Igwe; Ikpughul Sunday Iyua

doi:10.62292/10.62292/njp.v34i4.2025.460

Authors

Emmanuel Ifeanyi Ugwu
Ugwuei2@gmail.com

Nigerian Army University Biu
Barnaba Abel Adeiza
Nigerian Army University Biu
Hilary Uche Igwe
Ebonyi State University Abakaliki
Ikpughul Sunday Iyua
Nigerian Army University Biu

Keywords:

Bath deposition, Chalcogenide, Chemical Aluminum, Electrical, Influence, Properties, Solid State, Sulphide

Abstract

The rule of the electrical and solid state properties of sulphide based thin film has made it interesting for us to carry out a study on the electrical and solid-state properties of aluminum doped NiS deposited by chemical bath deposition method has been carried out in this work in order to ascertain the influence of the concentration of aluminum as a dopant on the electrical and solid state properties of NiS thin film material as pointed out. And from the results, it was obviously seen as showcased from the results such as the index of refraction, extinction coefficient, dielectric constants, optical conductance that there were significant influence of Al on the trends of these properties, in particular the electrical properties as obtained using four point probe that they were variations in trend of the graphs as the concentration of dopant, aluminum were varied indicating its effect on the behavior of the aforementioned properties of the thin film in question thereby clarifying the belief that generally doping is one of the parameters that can be used to modify the sulphide based chalcogenide.

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Electrical and Solid State Properties of Aluminum Doped Nickel Sulphide Thin Film by Chemical Bath Method

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