Influence of Magnesium Doping Concentrations and annealing on the Transmittance and Energy Band-gap of Sb2S3 Thin Films Deposited via Chemical Bath Deposition Technique
Main Article Content
Abstract
The incorporation of thin film materials into a wide range of technological applications has attracted considerable interest owing to their distinct properties and versatile functionalities. In this study, Magnesium alloyed and Antimony sulphide (Sb2S3) thin films were successfully deposited on glass substrates by chemical bath deposition technique. The films were grown at room temperature of constant pH. The concentrations of magnesium varied between 0.1M and 0.3M. The films were annealed at annealing temperature between 100˚C and 300˚C at a fixed annealing time of 1 hour. The films were characterized using UV-spectrophotometer to investigate the variation of optical and solid state properties with wavelength in the UV-VIS-NIR region. The result showed that the presence of the alloying agent and annealing treatments modified the optical and solid state properties of the films significantly. The transmittance of the films was high. Annealing led to reduced transmittance due to increased crystallite size, notably in films doped with 0.1M Mg2+ ions and annealed at 200˚C, suggesting enhanced photon absorption. The energy band gaps were found to be direct and in the range of 1.25 eV to 1.72 eV for the as grown films and 1.15eV to 1.3eV for the films annealed at annealing temperatures 300˚C. The study identifies a direct correlation between magnesium doping concentration, annealing conditions, and shifts in the energy band-gap of the films. The values of the energy band gaps are all within the range suitable for use of the layers as absorbers in hetero-junction solar cell devices for sustainable energy applications.
Downloads
Article Details
References
Agbo, P. E., and Nnabuchi, M. N. (2011). Core–shell TiO2/ZnO Thin Film: Preparation, Characterization and Effect of Temperature on some selected Properties. Chalcogenide Letters, 8(4), 273-282. https://chalcogen.ro/273_Agbo.pdf
Aousgi, F., and Kanzari, M. (2011).Study of the Optical Properties of Sn-Doped Sb2S3 Thin Films. Energy Procedia, 10, 313-322. https://doi.org/10.1016/j.egypro.2011.10.197
Augustine, C., and Nnabuchi, M. N. (2017). Band gap Determination of Novel PbS-NiO-CdOHeterojunctionThin Film for Possible Solar Energy Applications. Journal of Ovonic Research, 13(4), 233-240. https://chalcogen.ro/233_AugustineC.pdf
Birkett, M., Savory, C. N., Rajpalke, M. K., Linhart, W. M., Whittles, T. J., Gibbon, J. T. and Veal, T. D. (2018). Band gap Temperature-Dependence and Exciton-like state in Copper Antimony Sulphide, CuSbS2. APL Materials, 6(8), 084904. https://doi.org/10.1063/1.5030207
Cárdenas, E., Arato, A., Perez-Tijerina, E., Roy, T. D., Castillo, G. A., & Krishnan, B. (2009). Carbon-doped Sb2S3 thin films: structural, optical and electrical properties. Solar energy materials and solar cells, 93(1), 33-36. https://doi.org/10.1016/j.solmat.2008.02.026
Diliegros-Godines, C. J., Santos Cruz, J., Mathews, N. R., & Pal, M. (2018). Effect of Ag doping on structural, optical and electrical properties of antimony sulfide thin films. Journal of materials science, 53(16), 11562-11573. https://doi.org/10.1007/s10853-018-2420-3
Han, T., Luo, M., Liu, Y., Lu, C., Ge, Y., Xue, X., & Xu, X. (2022). Sb2S3/Sb2Se3 heterojunction for high-performance photodetection and hydrogen production. Journal of Colloid and Interface Science, 628, 886-895. https://doi.org/10.1016/j.jcis.2022.08.072
Ismail, B., Zeb, M. A., Kissinger, N. S., & Zeb, A. (2015). Low-temperature synthesis and characterization of Sn-doped Sb2S3 thin film for solar cell applications. Journal of Alloys and Compounds, 632, 723-728. https://link.springer.com/article/10.1007/s10853-018-2420-3
Islam, M. T., & Thakur, A. K. (2023). Effect of design modification on efficiency enhancement in Sb2S3 absorber based solar cell. Current Applied Physics, 49, 25-34. https://doi.org/10.1016/j.cap.2023.02.007
Kondrotas, R., Chen, C., & Tang, J. (2018). Sb2S3 solar cells. Joule, 2(5), 857-878. https://www.cell.com/joule/pdf/S2542-4351(18)30140-5.pdf
Lakhdar, M. H., Ouni, B., and Amlouk, M. (2014).Thickness Effect on the Structural and Optical Constants of Stibnite Thin Films Prepared by Sulfidation Annealing of Antimony Films. Optik-International Journal for Light and Electron Optics, 125(10), 2295-2301. https://doi.org/10.1016/j.ijleo.2013.10.114
Li, J., Xiong, L., Hu, X., Liang, J., Chen, C., Ye, F., & Fang, G. (2022). Manipulating the morphology of CdS/Sb2S3 heterojunction using a Mg-doped tin oxide buffer layer for highly efficient solar cells. Journal of Energy Chemistry, 66, 374-381. https://doi.org/10.1016/j.jechem.2021.08.029
Nair, P. K., García, G. V., Medina, E. A. Z., Martínez, L. G., Castrejón, O. L., Ortiz, J. M., and Nair, M. T. S. (2018). Antimony Sulfide-Selenide Thin Film Solar Cells Produced from Stibnite Mineral. Thin Solid Films, 645, 305-311. https://doi.org/10.1016/j.tsf.2017.11.004
Shah, U. A., Chen, S., Khalaf, G. M. G., Jin, Z., & Song, H. (2021). Wide bandgap Sb2S3 solar cells. Advanced Functional Materials, 31(27), 2100265. https://doi.org/10.1002/adfm.202100265
Tigau, N., Ciupina, V., Prodan, G., Rusu, G. I., Gheorghies, C., and Vasile, E. (2004). Influence of Thermal Annealing in Air on the structural and Optical Properties of Amorphous Antimony Trisulfide Thin Films. Journal of Optoelectronics and Advanced Materials, 6(1), 211-217 https://old.joam.inoe.ro/arhiva/pdf6_1/Tigau.pdf
Vinayakumar, V., Shaji, S., Avellaneda, D., Roy, T. D., Castillo, G. A., Martinez, J. A. A., and Krishnan, B. (2017).CuSbS2 Thin Films by Rapid Thermal Processing of Sb2S3-Cu Stack Layers for Photovoltaic Application. Solar Energy Materials and Solar Cells, 164, 19-27. https://doi.org/10.1016/j.solmat.2017.02.005
Wu, C., Zhang, L., Ding, H., Ju, H., Jin, X., Wang, X. and Chen, T. (2018). Direct Solution Deposition of Device Quality Sb2S3-x Se x Films for High Efficiency Solar Cells. Solar Energy Materials and Solar Cells, 183, 52-58. https://doi.org/10.1016/j.solmat.2018.04.009