In Silico Investigations of the Performance Characteristics of Agbis2 Solar Cell using Solar Cell Capacitance Simulator – 1 Dimension (SCAPS-1D)

Muteeu A. Olopade; Soko Swaray; Abdulai M. Feika

doi:10.62292/10.62292/njp.v34i3.2025.417

Authors

Muteeu A. Olopade
muteeu.olopade@usl.edu.sl

University of Lagos, Nigeria
Soko Swaray
Department of Physics, Fourah Bay College, University of Sierra Leone, Sierra Leone
Abdulai M. Feika
University of Sierra Leone

Keywords:

Spiro-OMeTAD, AgBiS2, Defect density, Temperature, Photovoltaic

Abstract

The research presents a theoretical investigation of a layered structure of ITO/ZnO/AgBiS₂/Spiro OMeTAD/MoO₃/Ag of AgBiS₂ photovoltaic cells. The top layer is composed of indium tin oxide (ITO) as a window layer, while intrinsic ZnO serves as the electron transport layer (ETL), a p-type AgBiS₂ absorber layer followed by two distinct hole-transport layers (HTLs), namely spiro-OMeTAD and molybdenum trioxide (MoO₃) and (Ag) serving as the back contact. This study aims to examine the effects of Spiro-OMeTAD HTL on the efficiency of an AgBiS₂-based heterostructure solar cell. The consequences of optimising various parameters, such as absorber thickness, absorber defect density, molybdenum trioxide (MoO₃) thickness, and temperature on the device efficiency were studied. The initial model achieved an efficiency of 9.62%, further enhanced to 11.86% by incorporating MoO₃ as a secondary hole transport layer. Optimising the MoO₃ thickness yielded a peak efficiency of 12.40%. Increasing the absorber thickness led to improved light absorption and carrier generation, with the highest performance of 14.16% achieved at 200 nm. Defect density variations from 10¹⁰ to 10²⁰ cm^-3 had a minimal impact on device performance, indicating the device's resilience to moderate defect changes. Temperature studies revealed an optimal operating range below 310 K, with the highest efficiency of 15.34% obtained at 280 K. These findings provide valuable understanding into the potential of AgBiS₂-based solar cells and the key parameters for performance optimisation. Hence, the device's resilience to moderate defect changes and the importance of temperature management for maximising the efficiency of AgBiS₂-based solar cells.

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In Silico Investigations of the Performance Characteristics of Agbis2 Solar Cell using Solar Cell Capacitance Simulator – 1 Dimension (SCAPS-1D)

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